 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| P1086 Vishay Siliconix P-Channel JFET PRODUCT SUMMARY VGS(off) Max (V) 10 rDS(on) Max (W) 75 ID(off) Typ (pA) -10 tON Typ (ns) 25 FEATURES D D D D D Low On-Resistance--<75 W Fast Switching--tON: 25 ns High Off-Isolation--ID(off): -10 pA Low Capacitance: 5 pF Low Insertion Loss BENEFITS D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering APPLICATIONS D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters DESCRIPTION The P1086 is a p-channel analog switch designed to provide low on-resistance and fast switching. This device is optimized for use in complementary switching applications with the Siliconix J/SST111 series. The P1086 device is available in various lead forms and tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) S 1 D 2 G 3 Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Document Number: 70259 S-00527--Rev. D, 03-Apr-00 Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com S FaxBack 408-970-5600 9-1 P1086 Vishay Siliconix SPECIFICATIONSa Limits Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current V(BR)GSS VGS(off) IDSS IGSS IG IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -1 mA VDS = -20 V, VGS = 0 V VGS = 15 V, VDS = 0 V TA = 85_C VDG = -15 V, ID = -1 mA VGS = 12 V D i C ff Current Drain Cutoff C ID(off) VDS = -15 V 15 VGS = 7 V TA = 85_C Drain-Source On-Resistance Gate-Source Forward Voltage rDS(on) VGS(F) VGS = 0 V, ID = -1 mA VDS = 0 V, IG = -1 mA -0.7 -10 0.01 0.6 0.01 -0.01 -0.01 -0.001 -10 -0.5 75 mA W V nA A 2 30 45 V 10 mA Symbol Test Conditions Min Typb Max Unit Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos rds(on) Ciss Crss en VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = -15 V, VGS = 0 V f = 1 MHz VDS = 0 V, VGS = 10 V, f = 1 MHz VDG = -10 V, ID = -1 mA f = 1 kHz 20 5 20 4.5 VDS = -15 V, ID = -1 mA , f = 1 kHz kH 20 75 45 pF 10 nV Hz mS mS W Switching Turn-On Time td(on) tr Turn-Off Time td(off) tf Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle 3%. VGS(L) = 0 V, VGS(H) = 10 V V, See Switching Circuit S S it hi Ci it 10 15 10 20 15 20 ns 15 50 PSCIA www.vishay.com S FaxBack 408-970-5600 9-2 Document Number: 70259 S-00527--Rev. D, 03-Apr-00 P1086 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 200 r DS(on) - Drain-Source On-Resistance ( W ) IDSS 160 rDS -80 -100 g fs - Forward Transconductance (mS) I DSS - Saturation Drain Current (mA) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 18 gfs and gos @ VDS = -15 V VGS = 0 V, f = 1 kHz g os - Output Conductance ( mS) 15 gfs 12 gos 150 200 250 120 -60 80 -40 9 100 40 rDS @ ID = -1 mA, VGS = 0 V IDSS @ VDS = -15 V, VGS = 0 V -20 6 50 0 0 2 4 6 8 10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 3 0 2 4 6 8 VGS(off) - Gate-Source Cutoff Voltage (V) 0 10 Output Characteristics -25 r DS(on) - Drain-Source On-Resistance ( W ) VGS(off) = 3 V -20 I D - Drain Current (mA) 0.5 V -15 1.0 V -10 1.5 V -5 2.0 V 0 0 -4 -8 -12 -16 -20 VGS = 0 V 250 On-Resistance vs. Drain Current TA = 25_C 200 VGS(off) = 1.5 V 150 3V 100 5V 50 0 -1 -10 ID - Drain Current (mA) -100 VDS - Drain-Source Voltage (V) Output Characteristics -2 VGS = 0 V -1.6 I D - Drain Current (mA) 0.5 V 1.0 V r DS(on) - Drain-Source On-Resistance ( W ) 1.5 V 240 300 On-Resistance vs. Temperature ID = -1 mA rDS changes X 0.7%/_C -1.2 2.0 V 180 VGS(off) = 1.5 V 3V -0.8 120 5V -0.4 VGS(off) = 3 V 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 60 0 -55 -35 -15 5 25 45 65 85 105 125 VDS - Drain-Source Voltage (V) TA - Temperature (_C) Document Number: 70259 S-00527--Rev. D, 03-Apr-00 www.vishay.com S FaxBack 408-970-5600 9-3 P1086 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Turn-On Switching 50 tr approximately independent of ID VDD = -10 V, RG = 220 W VGS(H) = 10 V, VGS(L) = 0 V 16 5V Switching Time (ns) Switching Time (ns) 30 tON @ ID = -5 mA tON @ ID = -10 mA 12 td(off) VGS(off) = 1.5 V 8 5V 4 tr @ ID = -5 mA 0 0 1 2 3 4 5 0 0 -3 -6 -9 -12 -15 VDD = -10 V, VGS(H) = 10 V, VGS(L) = 0 V 20 tf VGS(off) = 1.5 V Turn-Off Switching 40 20 10 VGS(off) - Gate-Source Cutoff Voltage (V) ID - Drain Current (mA) Capacitance vs. Gate-Source Voltage 30 VDS = 0 V f = 1 MHz 24 I G - Gate Leakage Capacitance (pF) 100 nA 10 nA Gate Leakage Current -1 mA TA = 125_C ID =-10 mA 1 nA 18 Ciss 12 Crss 6 100 pA IGSS @ 125_C -10 mA 10 pA TA = 25_C IGSS @ 25_C -1 mA 1 pA 0 0 4 8 12 16 20 0.1 pA 0 -10 -20 -30 -40 -50 VGS - Gate-Source Voltage (V) VDG - Drain-Gate Voltage (V) Transfer Characteristics -40 VGS(off) = 3 V -32 I D - Drain Current (mA) ( nV / Hz ) VDS = -15 V 100 Noise Voltage vs. Frequency ID = -0.1 mA -24 TA = -55_C 25_C 10 en - Noise Voltage -1 mA -16 -8 125_C 0 0 1 2 3 4 5 VDS = -10 V 1 10 100 1k f - Frequency (Hz) Document Number: 70259 S-00527--Rev. D, 03-Apr-00 10 k 100 k VGS - Gate-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 9-4 P1086 Vishay Siliconix SWITCHING TIME TEST CIRCUIT VDD VGG RL* RG* ID(on) *Non-inductive -6 V 12 V 1800 W 220 W -3 mA VGS(L) VGS(H) VGG VDD 1.2 kW RL 0.1 mF RG 7.5 kW Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF 51 W 1.2 kW Sampling Scope 51 W 51 W Document Number: 70259 S-00527--Rev. D, 03-Apr-00 www.vishay.com S FaxBack 408-970-5600 9-5 |
Price & Availability of P1086
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |